Invention Grant
US07800108B2 Semiconductor device and method of manufacturing semiconductor device including optical test pattern above a light shielding film
有权
半导体器件及其制造方法，其包括在遮光膜上方的光学测试图案的半导体器件
- Patent Title: Semiconductor device and method of manufacturing semiconductor device including optical test pattern above a light shielding film
- Patent Title (中): 半导体器件及其制造方法，其包括在遮光膜上方的光学测试图案的半导体器件
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Application No.: US12323614Application Date: 2008-11-26
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Publication No.: US07800108B2Publication Date: 2010-09-21
- Inventor: Hidetaka Nambu
- Applicant: Hidetaka Nambu
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-309937 20071130
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
The semiconductor device of the present invention includes a first insulating film on a substrate having a first region and a second region, a light shielding film formed in the first region and an interconnect film formed in the second region in the first insulating film and a second insulating film having a first concave portion above the light shielding film in the first region and an interconnect hole having a via hole and a second concave portion in the second region in the second insulating film on the first insulating film, wherein an area of the light shielding film is overlapping an area of the first plurality of concave portions.
Public/Granted literature
- US20090140247A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-06-04
Information query
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