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US07800110B2 Thin film transistor, display device having the same, and associated methods 有权
薄膜晶体管,具有相同的显示装置及相关方法

Thin film transistor, display device having the same, and associated methods
Abstract:
A thin film transistor (TFT), including a substrate, an active layer and a gate electrode on the substrate, and a first gate insulating layer and a second gate insulating layer between the active layer and the gate electrode. Each of the first gate insulating layer and the second gate insulating layer may have a thickness between approximately 200 Å and approximately 400 Å, inclusive.
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