Invention Grant
- Patent Title: Trench silicon-on-insulator (SOI) DRAM cell
- Patent Title (中): 沟槽硅绝缘体（SOI）DRAM单元
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Application No.: US12255780Application Date: 2008-10-22
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Publication No.: US07800111B2Publication Date: 2010-09-21
- Inventor: Jyi-Tsong Lin , Kuo-Dong Huang , Kao-Cheng Lin
- Applicant: Jyi-Tsong Lin , Kuo-Dong Huang , Kao-Cheng Lin
- Applicant Address: TW Kaohsiung
- Assignee: National Sun Yat-Sen University
- Current Assignee: National Sun Yat-Sen University
- Current Assignee Address: TW Kaohsiung
- Agency: Volentine & Whitt, PLLC
- Priority: TW96139594A 20071023
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
The present invention relates to a trench silicon-on-insulator (SOI) dynamic random access memory (DRAM) cell and a method for making the same. A source and a drain are utilized to each connect to one of two semiconductor conductive units on an external side of a main body having a plurality of semiconductor conductive units, and the semiconductor conductive units are utilized to accumulate electric charges generated from the drain so as to decrease a threshold voltage. In addition, the DRAM cell only uses one field effect transistor (FET) device (1T), has characteristics of the conventional 1T-DRAM, and has higher integration density. Moreover, the process of the invention is simple, so the production cost can be reduced.
Public/Granted literature
- US20090101958A1 TRENCH SOI-DRAM CELL AND METHOD FOR MAKING THE SAME Public/Granted day:2009-04-23
Information query
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