Invention Grant
- Patent Title: Semiconductor device comprising MIM capacitor
- Patent Title (中): 包括MIM电容器的半导体器件
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Application No.: US12257700Application Date: 2008-10-24
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Publication No.: US07800112B2Publication Date: 2010-09-21
- Inventor: Itaru Ootani , Shinichiro Hayashi , Shinji Nishiura
- Applicant: Itaru Ootani , Shinichiro Hayashi , Shinji Nishiura
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-277300 20071025
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A conductive film embedded in a predetermined region on an upper surface of an insulation film and metallic wirings embedded so as to penetrate through the conductive film and protrudes into the insulation film constitute a lower electrode of an MIM capacitor.
Public/Granted literature
- US20090108405A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2009-04-30
Information query
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