Invention Grant
- Patent Title: Semiconductor device and method of manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12406140Application Date: 2009-03-18
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Publication No.: US07800115B2Publication Date: 2010-09-21
- Inventor: Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
- Applicant: Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
- Applicant Address: JP Atsugi-shi, Kangawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kangawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-230401 20000731; JP2000-301389 20000929; JP2000-301390 20000929
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
Public/Granted literature
- US20090179205A1 Semiconductor Device and Method of Manufacturing Same Public/Granted day:2009-07-16
Information query
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