Invention Grant
- Patent Title: Semiconductor light emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US11961068Application Date: 2007-12-20
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Publication No.: US07800120B2Publication Date: 2010-09-21
- Inventor: Chisato Furukawa , Takafumi Nakamura
- Applicant: Chisato Furukawa , Takafumi Nakamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2006-342559 20061220
- Main IPC: H01L33/08
- IPC: H01L33/08

Abstract:
A semiconductor light emitting element comprising: a plurality of light-emitting-layer forming portions each of which includes a pn junction capable of emitting light of a certain wavelength, and which are separated from one another with a translucent resin formed on the side portions of the light-emitting-layer forming portions; a metal film disposed on first surfaces of the light-emitting-layer forming portions; a conductive substrate bonded to the metal film; a lower electrode formed on a surface of the conductive substrate, the surface being opposite to the surface to which the metal film is bonded; a transparent electrode which is connected to second surfaces, opposite to the first surfaces, of the light-emitting-layer forming portions, and which is substantially transparent to the certain wavelength; and an upper electrode formed above the second surfaces of the light-emitting-layer forming portions with the transparent electrode sandwiched in between.
Public/Granted literature
- US20080164457A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2008-07-10
Information query
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