Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US12068796Application Date: 2008-02-12
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Publication No.: US07800133B2Publication Date: 2010-09-21
- Inventor: Masahito Kanamura , Toshihide Kikkawa
- Applicant: Masahito Kanamura , Toshihide Kikkawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2007-035346 20070215
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta2O5 under a gate electrode.
Public/Granted literature
- US20080197453A1 Semiconductor device and manufacturing method of the same Public/Granted day:2008-08-21
Information query
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