Invention Grant
- Patent Title: Semiconductor integrated circuit and semiconductor integrated circuit design method
- Patent Title (中): 半导体集成电路和半导体集成电路设计方法
-
Application No.: US11858556Application Date: 2007-09-20
-
Publication No.: US07800136B2Publication Date: 2010-09-21
- Inventor: Hitoshi Shiga
- Applicant: Hitoshi Shiga
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-257941 20060922
- Main IPC: H01L27/10
- IPC: H01L27/10

Abstract:
The height H of several kinds of basic cell are made the same and several kinds of macro cell which have a length which is an integral multiplication of the height H of this basic cell, are prepared, the basic cell and macro cell are mixed and the circuit of a peripheral circuit is designed. A M0 wire of a first wiring layer which is formed on a semiconductor substrate is used as a wire used within a macro cell. The basic cell and the macro cell are connected by a M1 wire of a second wiring layer which is formed on the first wiring layer and a M2 wire M2 of a third wiring layer. The transistor layout of basic cells and macro cells is designed and verified in advance and stored in a cell library, and auto routing by a standard method may be carried out.
Public/Granted literature
- US20080073673A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DESIGN METHOD Public/Granted day:2008-03-27
Information query
IPC分类: