Invention Grant
- Patent Title: Solid state imaging apparatus and method for fabricating the same
- Patent Title (中): 固态成像装置及其制造方法
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Application No.: US12233080Application Date: 2008-09-18
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Publication No.: US07800144B2Publication Date: 2010-09-21
- Inventor: Mitsuyoshi Mori , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
- Applicant: Mitsuyoshi Mori , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-019618 20050127
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113

Abstract:
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
Public/Granted literature
- US20090014759A1 SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME Public/Granted day:2009-01-15
Information query
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