Invention Grant
US07800145B2 Method and apparatus for controlling charge transfer in CMOS sensors with a transfer gate work function
有权
用于控制具有传输门功能的CMOS传感器中的电荷转移的方法和装置
- Patent Title: Method and apparatus for controlling charge transfer in CMOS sensors with a transfer gate work function
- Patent Title (中): 用于控制具有传输门功能的CMOS传感器中的电荷转移的方法和装置
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Application No.: US11026582Application Date: 2004-12-30
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Publication No.: US07800145B2Publication Date: 2010-09-21
- Inventor: Zeynep Toros , Richard Mann , Selim Bencuya
- Applicant: Zeynep Toros , Richard Mann , Selim Bencuya
- Applicant Address: US CA Fremont
- Assignee: ESS Technology, Inc.
- Current Assignee: ESS Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Kenta Suzue
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.
Public/Granted literature
- US20060146157A1 Method and apparatus for controlling charge transfer in CMOS sensors with a transfer gate work function Public/Granted day:2006-07-06
Information query
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