Invention Grant
- Patent Title: Semiconductor device and method of forming the same
- Patent Title (中): 半导体器件及其形成方法
-
Application No.: US11600499Application Date: 2006-11-16
-
Publication No.: US07800158B2Publication Date: 2010-09-21
- Inventor: Hee-Seog Jeon , Jeong-Uk Han , Chang-Hun Lee , Sung-Taeg Kang
- Applicant: Hee-Seog Jeon , Jeong-Uk Han , Chang-Hun Lee , Sung-Taeg Kang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello LLP
- Priority: KR10-2005-0109998 20051117
- Main IPC: H01L31/032
- IPC: H01L31/032
Abstract:
There is provided a semiconductor device and a method of forming the same. The semiconductor device includes a memory device and a self-aligned selection device. A floating junction is formed between the self-aligned selection device and the memory device.
Public/Granted literature
- US20070126048A1 Semiconductor device and method of forming the same Public/Granted day:2007-06-07
Information query
IPC分类:
