Invention Grant
- Patent Title: Semiconductor device and method for producing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12025504Application Date: 2008-02-04
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Publication No.: US07800165B2Publication Date: 2010-09-21
- Inventor: Yuichiro Sasaki , Katsumi Okashita , Keiichi Nakamoto , Hiroyuki Ito , Bunji Mizuno
- Applicant: Yuichiro Sasaki , Katsumi Okashita , Keiichi Nakamoto , Hiroyuki Ito , Bunji Mizuno
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-011572 20070122
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.
Public/Granted literature
- US20080179683A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2008-07-31
Information query
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