Invention Grant
US07800174B2 Power semiconductor switching-device and semiconductor power module using the device
有权
功率半导体开关器件和使用该器件的半导体功率模块
- Patent Title: Power semiconductor switching-device and semiconductor power module using the device
- Patent Title (中): 功率半导体开关器件和使用该器件的半导体功率模块
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Application No.: US11101651Application Date: 2005-04-08
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Publication No.: US07800174B2Publication Date: 2010-09-21
- Inventor: Motoo Yamaguchi , Naohito Kato , Yutaka Tomatsu
- Applicant: Motoo Yamaguchi , Naohito Kato , Yutaka Tomatsu
- Applicant Address: JP Kariya
- Assignee: Denso Corporation
- Current Assignee: Denso Corporation
- Current Assignee Address: JP Kariya
- Agency: Nixon & Vanderhye, PC
- Priority: JP2004-115400 20040409; JP2005-031728 20050208
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
A single semiconductor power module includes a power semiconductor chip including an embedded IGBT (the power semiconductor switching-device) and a control semiconductor chip. The power semiconductor chip also includes a gate series resistor integrated therein as a resistor through which the control semiconductor chip drives the power semiconductor chip. In such a configuration, a gate wire between the gate series resistor and a gate has a small lead inductance and a small parasitic capacitance with respect to the ground.
Public/Granted literature
- US20050224909A1 Power semiconductor switching-device and semiconductor power module using the device Public/Granted day:2005-10-13
Information query
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