Invention Grant
US07800176B2 Electronic circuit for controlling a power field effect transistor
有权
用于控制功率场效应晶体管的电子电路
- Patent Title: Electronic circuit for controlling a power field effect transistor
- Patent Title (中): 用于控制功率场效应晶体管的电子电路
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Application No.: US12258988Application Date: 2008-10-27
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Publication No.: US07800176B2Publication Date: 2010-09-21
- Inventor: Wolfgang Werner
- Applicant: Wolfgang Werner
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119

Abstract:
An electronic circuit and a method for controlling a power field effect transistor. The electronic circuit includes a power field effect transistor having a semiconductor body, which has a drain zone, a drift zone, a source zone and a bulk zone. The power field effect transistor further includes a gate and a field plate. The field plate is placed adjacent to the drift zone and is isolated from the drift zone. A switch circuitry is provided for electrically connecting the field plate depending on the drain-source voltage such that the field plate is electrically connected to the drain zone, if |UDS|>UT, where UT is a predetermined voltage, and if |UDS|>UT, the field plate is connected to an electrode having an electrode-source voltage UES.
Public/Granted literature
- US20100102871A1 ELECTRONIC CIRCUIT AND METHOD FOR CONTROLLING A POWER FIELD EFFECT TRANSISTOR Public/Granted day:2010-04-29
Information query
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