Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US11582556Application Date: 2006-10-18
-
Publication No.: US07800181B2Publication Date: 2010-09-21
- Inventor: Yasutoshi Okuno , Michikazu Matsumoto , Masafumi Kubota , Seiji Ueda , Hiroshi Iwai , Kazuo Tsutsui , Kuniyuki Kakushima
- Applicant: Yasutoshi Okuno , Michikazu Matsumoto , Masafumi Kubota , Seiji Ueda , Hiroshi Iwai , Kazuo Tsutsui , Kuniyuki Kakushima
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-304753 20051019; JP2005-355808 20051209
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A gate electrode is formed on a semiconductor substrate containing silicon, then source/drain regions are formed in regions of the semiconductor substrate located to both sides of the gate electrode, and then a nickel alloy silicide layer is formed on at least either the gate electrode or the source/drain regions. In the step of forming the nickel alloy silicide layer, a nickel alloy film and a nickel film are sequentially deposited on the semiconductor substrate and thereafter subjected to heat treatment.
Public/Granted literature
- US20070093047A1 Semiconductor device and method for fabricating the same Public/Granted day:2007-04-26
Information query
IPC分类:
