Invention Grant
- Patent Title: Semiconductor device and method of fabricating metal gate of the same
- Patent Title (中): 半导体器件及其制造金属栅极的方法
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Application No.: US12073628Application Date: 2008-03-07
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Publication No.: US07800186B2Publication Date: 2010-09-21
- Inventor: Sung-ho Park , Jin-seo Noh , Joong-S. Jeon
- Applicant: Sung-ho Park , Jin-seo Noh , Joong-S. Jeon
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0089958 20070905
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
Provided is a semiconductor device and a method of fabricating a metal gate in the semiconductor device. The semiconductor device includes a metal gate formed on a gate insulating film, the metal gate is formed of a mixture of a metal nitride and a metal carbide, and a work function of the metal gate is determined according to ratios of the metal nitride with respect to the metal carbide.
Public/Granted literature
- US20090057783A1 Semiconductor device and method of fabricating metal gate of the same Public/Granted day:2009-03-05
Information query
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