Semiconductor circuit

Invention Grant

US07800199B2 Semiconductor circuit 有权

Title translation: 半导体电路

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Patent Title: Semiconductor circuit
Patent Title (中): 半导体电路
Application No.: US12040642

Application Date: 2008-02-29
Publication No.: US07800199B2

Publication Date: 2010-09-21
Inventor: ChoonSik Oh , Sang-Yun Lee
Applicant: ChoonSik Oh , Sang-Yun Lee
Agency: Schmeiser Olsen & Watts LLP
Priority: KR10-2003-0040920 20030624; KR10-2003-0047515 20030712
Main IPC: H01L21/46
IPC: H01L21/46

Abstract:

A semiconductor memory device includes a substrate and an interconnect region carried by the substrate. A donor layer is coupled to the interconnect region through a bonding interface. An electronic device is formed with the donor layer, wherein the electronic device is formed after the bonding interface is formed. A capacitor is connected to the electronic device so that the electronic device and capacitor operate as a dynamic random access memory device.

Abstract(Chinese):

半导体存储器件包括衬底和由衬底承载的互连区域。供体层通过接合界面耦合到互连区域。电子器件形成有施主层，其中在形成接合界面之后形成电子器件。电容器连接到电子设备，使得电子设备和电容器作为动态随机存取存储器件操作。

Public/Granted literature

US20080191312A1 SEMICONDUCTOR CIRCUIT Public/Granted day:2008-08-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）