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US07800200B2 Wireless IC tag and method for manufacturing same 失效
无线IC标签及其制造方法

  • Patent Title: Wireless IC tag and method for manufacturing same
  • Patent Title (中): 无线IC标签及其制造方法
  • Application No.: US11722942
    Application Date: 2005-02-24
  • Publication No.: US07800200B2
    Publication Date: 2010-09-21
  • Inventor: Mitsuo Usami
  • Applicant: Mitsuo Usami
  • Applicant Address: JP Tokyo
  • Assignee: Hitachi, Ltd.
  • Current Assignee: Hitachi, Ltd.
  • Current Assignee Address: JP Tokyo
  • Agency: Miles & Stockbridge P.C.
  • International Application: PCT/JP2005/003025 WO 20050224
  • International Announcement: WO2006/090459 WO 20060831
  • Main IPC: H01L21/8234
  • IPC: H01L21/8234
Wireless IC tag and method for manufacturing same
Abstract:
A wireless IC tag is provided with a memory circuit including a ROM in which an identification number is written, and a pulse width detection circuit having divided resistors and a capacitor for detecting a signal waveform from a reader. In order to prevent the increase in the number of process steps and photomasks, a resistance value of the pulse width detection circuit is adjusted by an electron beam writing method while utilizing a step of writing an identification number unique to the wireless IC tag into the ROM of the memory circuit.
Abstract(Chinese):

无线IC标签设置有包括其中写入识别号码的ROM的存储电路和具有分压电阻器的脉冲宽度检测电路和用于从读取器检测信号波形的电容器。 为了防止工艺步骤和光掩模的数量的增加，脉冲宽度检测电路的电阻值通过电子束写入方法进行调节，同时利用将无线IC标签唯一的标识号写入ROM的步骤 的存储电路。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
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