Invention Grant
- Patent Title: Thinned wafer having stress dispersion parts and method for manufacturing semiconductor package using the same
- Patent Title (中): 具有应力分散部件的薄片晶片及其制造方法
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Application No.: US12043478Application Date: 2008-03-06
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Publication No.: US07800201B2Publication Date: 2010-09-21
- Inventor: Sung Ho Hyun
- Applicant: Sung Ho Hyun
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2007-0063263 20070626
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A thinned wafer having stress dispersion parts that make the wafer resistant to warpage and a method for manufacturing a semiconductor package using the same is described. The wafer includes a wafer body having a semiconductor chip forming zone and a peripheral zone located around the semiconductor chip forming zone; and the stress dispersion parts are located in the peripheral zone so as to disperse stress induced in the peripheral zone and the semiconductor chip forming zone.
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