Method of reducing the surface roughness of spin coated polymer films

Invention Grant

US07800203B2 Method of reducing the surface roughness of spin coated polymer films 有权

Title translation: 降低旋涂聚合物膜表面粗糙度的方法

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Patent Title: Method of reducing the surface roughness of spin coated polymer films
Patent Title (中): 降低旋涂聚合物膜表面粗糙度的方法
Application No.: US12215622

Application Date: 2008-06-27
Publication No.: US07800203B2

Publication Date: 2010-09-21
Inventor: Michael J. Leeson , Ebrahim Andideh
Applicant: Michael J. Leeson , Ebrahim Andideh
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Blakely, Sokoloff, Taylor & Zafman LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Method of reducing the surface roughness of spin coated polymer films

Abstract:

According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

Abstract(Chinese):

根据本发明的一个方面，提供了一种构造存储器阵列的方法。在半导体晶片上形成绝缘层。然后在绝缘层上形成第一金属叠层并蚀刻以形成第一金属线。在第一金属线和绝缘层之上形成聚合物层。然后将平滑溶剂的水坑放置在晶片上。然后除去平滑溶剂。在除去平滑溶剂后，聚合物层的表面粗糙度降低。然后在聚合物层上形成第二金属叠层并蚀刻以形成第二金属线。

Public/Granted literature

US20080284034A1 Method of reducing the surface roughness of spin coated polymer films Public/Granted day:2008-11-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）