Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11857082Application Date: 2007-09-18
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Publication No.: US07800210B2Publication Date: 2010-09-21
- Inventor: Kouichi Nagai
- Applicant: Kouichi Nagai
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L23/06
- IPC: H01L23/06
Abstract:
It is an aspect of the embodiments discussed herein to provide a semiconductor device including: a substrate; a base on the substrate; an integrated circuit chip on the base; and a ball grid array type package material made of a resin and encapsulating the integrated circuit chip.
Public/Granted literature
- US20080006914A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-01-10
Information query
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