Invention Grant
- Patent Title: Power semiconductor circuit with busbar system
- Patent Title (中): 功率半导体电路带母线系统
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Application No.: US11549779Application Date: 2006-10-16
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Publication No.: US07800213B2Publication Date: 2010-09-21
- Inventor: Reinhold Bayerer
- Applicant: Reinhold Bayerer
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Coats & Bennett, P.L.L.C.
- Priority: DE102004018469 20040416
- Main IPC: H01L23/22
- IPC: H01L23/22 ; H01L23/24 ; H01L23/52 ; H01L23/12 ; H01L23/053 ; H01L23/34 ; H01L23/50 ; H01L23/528

Abstract:
A power semiconductor circuit has a power semiconductor module (2) embodied as a flat assembly. A particularly compact and space-saving production of a power semiconductor circuit may be achieved with the possibilities provided by an embodiment of the power semiconductor module, whereby the power semiconductor module (2) is arranged directly on a top track (3) of a power supply and/or output tracking (11) and a cooling device (5) is integrated in the tracking (11).
Public/Granted literature
- US20070114665A1 Power Semiconductor Circuit Public/Granted day:2007-05-24
Information query
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