Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11563312Application Date: 2006-11-27
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Publication No.: US07800214B2Publication Date: 2010-09-21
- Inventor: Yasuhiro Yoshikawa , Motoo Suwa , Hiroshi Toyoshima
- Applicant: Yasuhiro Yoshikawa , Motoo Suwa , Hiroshi Toyoshima
- Applicant Address: JP Kanagawa
- Assignee: Renensas Electronics Corporation
- Current Assignee: Renensas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, P.C.
- Priority: JP2005-342479 20051128
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/4763

Abstract:
Mutual inductance from an external output signal system to an external input signal system, in which parallel input/output operation is enabled, is reduced. A semiconductor integrated circuit has a plurality of external connection terminals facing a package substrate, and has an external input terminal and an external output terminal, in which parallel input/output operation is enabled, as part of the external connection terminals. The package substrate has a plurality of wiring layers for electrically connecting between the external connection terminals and module terminals corresponding to each other. A first wiring layer facing the semiconductor integrated circuit has a major wiring for connecting between the external input terminal and a module terminal corresponding to each other, and a second wiring layer in which the module terminals are formed has a major wiring for connecting between an external output terminal and a module terminal corresponding to each other. A major signal wiring of an external output system connected to the external output terminal, which may be a noise source, is made to be in a wiring layer distant from the semiconductor integrated circuit.
Public/Granted literature
- US20070120245A1 SEMICONDUCTOR DEVICE Public/Granted day:2007-05-31
Information query
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