Invention Grant
- Patent Title: High-power semiconductor die packages with integrated heat-sink capability and methods of manufacturing the same
- Patent Title (中): 具有集成散热能力的大功率半导体管芯封装及其制造方法
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Application No.: US11968602Application Date: 2008-01-02
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Publication No.: US07800219B2Publication Date: 2010-09-21
- Inventor: Oseob Jeon , Chung-Lin Wu , Eddy Tjhia , Bigildis C. Dosdos
- Applicant: Oseob Jeon , Chung-Lin Wu , Eddy Tjhia , Bigildis C. Dosdos
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/10

Abstract:
An exemplary semiconductor die package of the invention has a metal-oxide substrate disposed between a first surface of a semiconductor die and a heat-sinking component, with a conductive die clip or one or more electrical interconnect traces disposed between the metal-oxide substrate and the first surface of the semiconductor die. The heat-sinking component may comprise a heat sink, or an adaptor plate to which a heat sink may be coupled. The conductive die clip or electrical trace(s) provides electrical connection(s) to the first surface of the semiconductor die, while the metal-oxide substrate electrically insulates the die from the heat-sinking component, and provides a path of high thermal conductivity between the die and the heat-sinking component. The second surface of the semiconductor die may be left free to connect to a circuit board, or a leadframe or interconnect substrate may be attached to it.
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