Invention Grant
- Patent Title: Power device package
- Patent Title (中): 功率器件封装
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Application No.: US11965983Application Date: 2007-12-28
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Publication No.: US07800224B2Publication Date: 2010-09-21
- Inventor: Joo-sang Lee , O-seob Jeon , Yong-suk Kwon , Frank Chen , Adams Zhu
- Applicant: Joo-sang Lee , O-seob Jeon , Yong-suk Kwon , Frank Chen , Adams Zhu
- Applicant Address: KR Bucheon-si
- Assignee: Fairchild Korea Semiconductor, Ltd.
- Current Assignee: Fairchild Korea Semiconductor, Ltd.
- Current Assignee Address: KR Bucheon-si
- Agency: Hiscock & Barclay, LLP
- Agent Thomas R. FitzGerald, Esq.
- Priority: KR10-2006-0137730 20061229
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A power device package according to the one embodiment of the present invention includes an insulating substrate with an interconnection pattern disposed on the insulating substrate. The interconnection pattern comprises a single conductive layer comprising a first metal layer, and a multiple conductive layer comprising another first metal layer and a second metal layer disposed on the another first metal layer. A plurality of wires are attached to an upper surface of the single conductive layer and/or an upper surface of the second metal layer of the multiple conductive layer. Contact pads on a power control semiconductor chip and a low power semiconductor chip driving the power control semiconductor chip are electrically connected to the wires.
Public/Granted literature
- US20080157310A1 POWER DEVICE PACKAGE Public/Granted day:2008-07-03
Information query
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