Invention Grant
US07800232B2 Metallic electrode forming method and semiconductor device having metallic electrode
有权
金属电极形成方法和具有金属电极的半导体器件
- Patent Title: Metallic electrode forming method and semiconductor device having metallic electrode
- Patent Title (中): 金属电极形成方法和具有金属电极的半导体器件
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Application No.: US12073166Application Date: 2008-02-29
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Publication No.: US07800232B2Publication Date: 2010-09-21
- Inventor: Manabu Tomisaka , Hisatoshi Kojima , Akihiro Niimi
- Applicant: Manabu Tomisaka , Hisatoshi Kojima , Akihiro Niimi
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2007-055982 20070306; JP2007-194016 20070726; JP2007-222762 20070829; JP2007-337039 20071227
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.
Public/Granted literature
- US20080217771A1 Metallic electrode forming method and semiconductor device having metallic electrode Public/Granted day:2008-09-11
Information query
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