Invention Grant
US07800234B2 Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby
有权
用于制造半导体器件中的深通孔的工艺，以及由此制造的半导体器件
- Patent Title: Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby
- Patent Title (中): 用于制造半导体器件中的深通孔的工艺，以及由此制造的半导体器件
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Application No.: US11600687Application Date: 2006-11-16
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Publication No.: US07800234B2Publication Date: 2010-09-21
- Inventor: Mauro Marchi , Marco Ferrera , Caterina Riva
- Applicant: Mauro Marchi , Marco Ferrera , Caterina Riva
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Wolf, Greenfield & Sacks, P.C.
- Agent Lisa K. Jorgenson; James H. Morris
- Priority: EP05425807 20051116
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A process for manufacturing a through via in a semiconductor device includes the steps of: forming a body having a structural layer, a substrate, and a dielectric layer set between the structural layer and the substrate; insulating a portion of the structural layer to form a front-side interconnection region; insulating a portion of the substrate to form a back-side interconnection region; and connecting the front-side interconnection region and the back-side interconnection region through the dielectric layer.
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