Invention Grant
US07800239B2 Thick metal interconnect with metal pad caps at selective sites and process for making the same
有权
在选择性位置的金属焊盘盖的金属金属互连和制造相同的工艺
- Patent Title: Thick metal interconnect with metal pad caps at selective sites and process for making the same
- Patent Title (中): 在选择性位置的金属焊盘盖的金属金属互连和制造相同的工艺
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Application No.: US12012121Application Date: 2008-01-31
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Publication No.: US07800239B2Publication Date: 2010-09-21
- Inventor: Hormazdyar Minocher Dalal , Jagdish Prasad , Hocine Bouzid Ziad
- Applicant: Hormazdyar Minocher Dalal , Jagdish Prasad , Hocine Bouzid Ziad
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Ahsan & Associates, PLLC
- Agent Aziz M. Ahsan
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40
Abstract:
The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.
Public/Granted literature
- US20090152725A1 Thick metal interconnect with metal pad caps at selective sites and process for making the same Public/Granted day:2009-06-18
Information query
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