Invention Grant
- Patent Title: Under bump metallurgy structure and wafer structure using the same and method of manufacturing wafer structure
- Patent Title (中): 凸块下冶金结构和晶圆结构采用相同的方法制造晶圆结构
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Application No.: US12149861Application Date: 2008-05-09
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Publication No.: US07800240B2Publication Date: 2010-09-21
- Inventor: Jui-I Yu
- Applicant: Jui-I Yu
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Bacon & Thomas, PLLC
- Priority: TW96121429A 20070613
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40
Abstract:
An under bump metallurgy structure and wafer structure using the same and method of manufacturing wafer structure are provided. The under bump metallurgy structure includes an adhesion layer, a barrier layer and a wetting layer. The adhesion layer is disposed on a bonding pad of a wafer. The barrier layer is disposed on the adhesion layer. The wetting layer is disposed on the barrier layer. The adhesion layer, the barrier layer and the wetting layer are respectively made of nickel with boron, cobalt and gold.
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