Invention Grant
- Patent Title: Contact device and method for producing the same
- Patent Title (中): 接触装置及其制造方法
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Application No.: US12174645Application Date: 2008-07-17
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Publication No.: US07800386B2Publication Date: 2010-09-21
- Inventor: Kiyoto Nakamura , Hiroshi Arikawa , Yoshiaki Moro , Hirokazu Sampei
- Applicant: Kiyoto Nakamura , Hiroshi Arikawa , Yoshiaki Moro , Hirokazu Sampei
- Applicant Address: JP Tokyo
- Assignee: Advantest Corporation
- Current Assignee: Advantest Corporation
- Current Assignee Address: JP Tokyo
- Agency: Jianq Chyun IP Office
- Priority: JP2006-011028 20060119; JP2006-208841 20060731
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/28

Abstract:
Provided is a method for producing a contact device, including a step of forming a first conductive film; a step of forming a second conductive film containing a metal or an alloy of the metal on the first conductive film; a step of forming a third conductive film on the second conductive film; and a step of forming a surface layer on the third conductive film, the surface layer containing an oxidative product of the metal in the second conductive film, which metal has been diffused to be precipitated out from the surface of the third conductive film and oxidized.
Public/Granted literature
- US20090184728A1 CONTACT DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2009-07-23
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