Invention Grant
US07800479B2 Semiconductor device having a trim cut and method of evaluating laser trimming thereof
有权
具有修剪切割的半导体器件及其激光修整的评估方法
- Patent Title: Semiconductor device having a trim cut and method of evaluating laser trimming thereof
- Patent Title (中): 具有修剪切割的半导体器件及其激光修整的评估方法
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Application No.: US12292352Application Date: 2008-11-18
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Publication No.: US07800479B2Publication Date: 2010-09-21
- Inventor: Michio Yamashita
- Applicant: Michio Yamashita
- Applicant Address: JP Kariya
- Assignee: Denso Corporation
- Current Assignee: Denso Corporation
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2005-211811 20050721
- Main IPC: H01C10/00
- IPC: H01C10/00
Abstract:
A method of evaluating laser trimming of a semiconductor device having a thin film resistor is disclosed. The method includes the steps of providing the thin film resistor and laser trimming the thin film resistor by creating a first trim cut. The first trim cut bisects the thin film resistor such that the thin film resistor is divided into a first portion and a second portion. Also, the method involves measuring the insulation resistance of the thin film resistor. In addition, the method involves evaluating the trim cut based on the measured insulation resistance.
Public/Granted literature
- US20090079536A1 Semiconductor device having a trim cut and method of evaluating laser trimming thereof Public/Granted day:2009-03-26
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