Invention Grant
- Patent Title: RFID device having a nonvolatile ferroelectric memory
- Patent Title (中): 具有非易失性铁电存储器的RFID装置
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Application No.: US11482029Application Date: 2006-07-07
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Publication No.: US07800481B2Publication Date: 2010-09-21
- Inventor: Hee Bok Kang , Jin Hong Ahn
- Applicant: Hee Bok Kang , Jin Hong Ahn
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2005-0120633 20051209
- Main IPC: H04Q5/22
- IPC: H04Q5/22 ; G11C7/10 ; G11C7/00

Abstract:
A radio frequency identification (RFID) device includes an antenna configured to transmit or receive a radio frequency signal to or from an external communication apparatus; an analog block configured to generate a first power voltage in response to the radio frequency signal; a digital block configured to receive the first power voltage from the analog block, to transmit a response signal to the analog block, and to output a memory control signal; and a memory configured to read/write data in response to the memory control signal, the memory including a high voltage generating unit for generating a second power voltage from the first power voltage, a first portion driven by the second power voltage, and a second portion driven by the first power voltage, wherein the level of the first power voltage is lower than that of the second power voltage.
Public/Granted literature
- US20070132557A1 RFID device having a nonvolatile ferroelectric memory Public/Granted day:2007-06-14
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