Invention Grant
- Patent Title: Method and apparatus for removing particles in immersion lithography
- Patent Title (中): 浸没光刻中去除颗粒的方法和装置
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Application No.: US11556550Application Date: 2006-11-03
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Publication No.: US07800731B2Publication Date: 2010-09-21
- Inventor: Hsin Chang , Tzung-Chi Fu , Tsai-Sheng Gau
- Applicant: Hsin Chang , Tzung-Chi Fu , Tsai-Sheng Gau
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03B27/52

Abstract:
A method and system involve supplying an immersion fluid to a space between an imaging lens and a substrate to be patterned, generating an electric field in the immersion fluid within the space so that the electric field urges particles away from a surface of the substrate, removing the immersion fluid along with the particles from the space, and thereafter supplying immersion fluid to the space and performing a lithographic exposing process on the surface of the substrate.
Public/Granted literature
- US20080106709A1 Method and Apparatus For Removing Particles in Immersion Lithography Public/Granted day:2008-05-08
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