Invention Grant
US07800866B2 Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer
有权
包含构成自由磁性层或固定磁性层的四元Heusler合金Co2Mn(Ge1-xSnx)的磁感测元件
- Patent Title: Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer
- Patent Title (中): 包含构成自由磁性层或固定磁性层的四元Heusler合金Co2Mn(Ge1-xSnx)的磁感测元件
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Application No.: US11386206Application Date: 2006-03-22
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Publication No.: US07800866B2Publication Date: 2010-09-21
- Inventor: Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
- Applicant: Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2005-090709 20050328
- Main IPC: G11B5/33
- IPC: G11B5/33

Abstract:
A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer therebetween, wherein a current flows perpendicular to the surfaces of the individual layers of the multilayer film. The nonmagnetic layer is composed of Cu and has a face-centered cubic lattice crystal structure in which the {111} planes are preferentially oriented in a direction parallel to the surfaces of the layer. At least one of the pinned magnetic layer and the free magnetic layer includes a Co2Mn(Ge1-xSnx) alloy layer, the subscript x satisfying the range of 0.2≦x≦0.8; and the Co2Mn(Ge1-xSnx) alloy layer has a body-centered cubic lattice crystal structure in which the {110} planes are preferentially oriented in a direction parallel to the surfaces of the layer.
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