Invention Grant
- Patent Title: Electrostatic shield and method of fabricating the same
- Patent Title (中): 静电屏蔽及其制造方法
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Application No.: US11692059Application Date: 2007-03-27
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Publication No.: US07800882B2Publication Date: 2010-09-21
- Inventor: De-Feng Gao , Qing-Bin Zeng
- Applicant: De-Feng Gao , Qing-Bin Zeng
- Applicant Address: CN ShenZhen, Guangdong Province HK Kowloon
- Assignee: Shenzhen Futaihong Precision Industry Co., Ltd.,FIH (Hong Kong) Limited
- Current Assignee: Shenzhen Futaihong Precision Industry Co., Ltd.,FIH (Hong Kong) Limited
- Current Assignee Address: CN ShenZhen, Guangdong Province HK Kowloon
- Agent Jeffrey T. Knapp
- Priority: CN200610157310 20061201
- Main IPC: H02H1/00
- IPC: H02H1/00 ; H02H1/04 ; H02H3/22 ; H05F3/00 ; H05F3/02 ; H02H9/00
Abstract:
An electrostatic shield (10) for use in a portable electronic device (A or B) includes a base (12), a conductive layer (14), and an electroplate layer (16). The conductive layer is formed on the base. The electroplate layer is formed on the conductive layer and defines an aperture (162) therethrough. A portion of the conductive layer is revealed/exposed through the electroplate layer via the aperture. A method for fabricating the electrostatic shield is also provided.
Public/Granted literature
- US20080130187A1 ELECTROSTATIC SHIELD AND METHOD OF FABRICATING THE SAME Public/Granted day:2008-06-05
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