Invention Grant
- Patent Title: Programming methods to increase window for reverse write 3D cell
- Patent Title (中): 编程方法增加反向写入3D单元格的窗口
-
Application No.: US11819077Application Date: 2007-06-25
-
Publication No.: US07800934B2Publication Date: 2010-09-21
- Inventor: Tanmay Kumar , S. Brad Herner , Christopher J. Petti
- Applicant: Tanmay Kumar , S. Brad Herner , Christopher J. Petti
- Applicant Address: US CA Milpitas
- Assignee: Sandisk 3D LLC
- Current Assignee: Sandisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/36
Abstract:
A method of operating a nonvolatile memory cell includes providing the nonvolatile memory cell comprising a diode which is fabricated in a first resistivity, unprogrammed state, and applying a forward bias to the diode having a magnitude greater than a minimum voltage required for programming the diode to switch the diode to a second resistivity, programmed state. The second resistivity state is lower than the first resistivity state.
Public/Granted literature
- US20080007989A1 Programming methods to increase window for reverse write 3D cell Public/Granted day:2008-01-10
Information query
