Invention Grant
- Patent Title: Resistance change memory device
- Patent Title (中): 电阻变化记忆装置
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Application No.: US12252675Application Date: 2008-10-16
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Publication No.: US07800935B2Publication Date: 2010-09-21
- Inventor: Hiroshi Maejima , Katsuaki Isobe , Naoya Tokiwa , Satoru Takase , Yasuyuki Fukuda , Hideo Mukai , Tsuneo Inaba
- Applicant: Hiroshi Maejima , Katsuaki Isobe , Naoya Tokiwa , Satoru Takase , Yasuyuki Fukuda , Hideo Mukai , Tsuneo Inaba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-269973 20071017
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R0, R1 and R2 (R0 ΔR2.
Public/Granted literature
- US20090109728A1 RESISTANCE CHANGE MEMORY DEVICE Public/Granted day:2009-04-30
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