Invention Grant
- Patent Title: Method of making 3D R/W cell with reduced reverse leakage
- Patent Title (中): 制造具有减少反向泄漏的3D R / W电池的方法
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Application No.: US11819895Application Date: 2007-06-29
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Publication No.: US07800939B2Publication Date: 2010-09-21
- Inventor: Tanmay Kumar , Christopher J. Petti
- Applicant: Tanmay Kumar , Christopher J. Petti
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of making a nonvolatile memory device includes forming a semiconductor diode steering element, and forming a semiconductor read/write switching element.
Public/Granted literature
- US20090003036A1 Method of making 3D R/W cell with reduced reverse leakage Public/Granted day:2009-01-01
Information query
