Invention Grant
US07800942B2 Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
有权
用于提供磁性元件和磁存储器的方法和系统是单向写入使能的
- Patent Title: Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
- Patent Title (中): 用于提供磁性元件和磁存储器的方法和系统是单向写入使能的
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Application No.: US12136916Application Date: 2008-06-11
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Publication No.: US07800942B2Publication Date: 2010-09-21
- Inventor: Eugene Chen , Dmytro Apalkov
- Applicant: Eugene Chen , Dmytro Apalkov
- Applicant Address: US CA Milpitas JP Tokyo
- Assignee: Grandis, Inc.,Renesas Technology Corp.
- Current Assignee: Grandis, Inc.,Renesas Technology Corp.
- Current Assignee Address: US CA Milpitas JP Tokyo
- Agency: Convergent Law Group LLP
- Main IPC: G11C11/15
- IPC: G11C11/15

Abstract:
A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KuV/kBT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.
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