Invention Grant
- Patent Title: Data output circuit in semiconductor memory apparatus
- Patent Title (中): 半导体存储装置中的数据输出电路
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Application No.: US12173724Application Date: 2008-07-15
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Publication No.: US07800957B2Publication Date: 2010-09-21
- Inventor: Kwang-Jin Na
- Applicant: Kwang-Jin Na
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2007-0138418 20071227
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A data output circuit in a semiconductor memory apparatus includes a first data driving unit configured to generate a first driving data at a first timing, a first buffering unit configured to generate a first output data by buffering the first driving data, a second data driving unit configured to generate a second driving data at a second timing that is different from the first timing, and a second buffering unit configured to generate a second output data by buffering the second driving data.
Public/Granted literature
- US20090168548A1 DATA OUTPUT CIRCUIT IN SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2009-07-02
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