Invention Grant
- Patent Title: Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
- Patent Title (中): 闪存设备和通过重叠多个垫的编程操作对其编程的方法
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Application No.: US12541429Application Date: 2009-08-14
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Publication No.: US07800971B2Publication Date: 2010-09-21
- Inventor: Jin-Sung Park , Dae-Seok Byeon
- Applicant: Jin-Sung Park , Dae-Seok Byeon
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2004-109827 20041221
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/34 ; G11C16/04
Abstract:
A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.
Public/Granted literature
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