Invention Grant
US07801277B2 Field emitter based electron source with minimized beam emittance growth
失效
基于场发射器的电子源具有最小的束发射增长
- Patent Title: Field emitter based electron source with minimized beam emittance growth
- Patent Title (中): 基于场发射器的电子源具有最小的束发射增长
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Application No.: US12055536Application Date: 2008-03-26
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Publication No.: US07801277B2Publication Date: 2010-09-21
- Inventor: Yun Zou , Yang Cao , Louis Paul Inzinna , Vasile Bogdan Neculaes
- Applicant: Yun Zou , Yang Cao , Louis Paul Inzinna , Vasile Bogdan Neculaes
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Scott J. Asmus
- Main IPC: G21B4/00
- IPC: G21B4/00 ; H01J35/14 ; H01J35/02 ; H01J35/00

Abstract:
A system and method for limiting emittance growth in an electron beam is disclosed. The system includes an emitter element configured to generate an electron beam and an extraction electrode positioned adjacent to the emitter element to extract the electron beam out therefrom, the extraction electrode including an opening therethrough. The system also includes a meshed grid disposed in the opening of the extraction electrode to enhance intensity and uniformity of an electric field at a surface of the emitter element and an emittance compensation electrode (ECE) positioned adjacent to the meshed grid on the side of the meshed grid opposite that of the emitter element and configured to control emittance growth of the electron beam.
Public/Granted literature
- US20090245468A1 FIELD EMITTER BASED ELECTRON SOURCE WITH MINIMIZED BEAM EMITTANCE GROWTH Public/Granted day:2009-10-01
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