Invention Grant
US07801406B2 Method of fabricating Ge or SiGe/Si waveguide or photonic crystal structures by selective growth
有权
通过选择性生长制造Ge或SiGe / Si波导或光子晶体结构的方法
- Patent Title: Method of fabricating Ge or SiGe/Si waveguide or photonic crystal structures by selective growth
- Patent Title (中): 通过选择性生长制造Ge或SiGe / Si波导或光子晶体结构的方法
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Application No.: US11194805Application Date: 2005-08-01
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Publication No.: US07801406B2Publication Date: 2010-09-21
- Inventor: Dong Pan , Jifeng Liu , Jurgen Michel , John Yasaitis , Lionel C. Kimerling
- Applicant: Dong Pan , Jifeng Liu , Jurgen Michel , John Yasaitis , Lionel C. Kimerling
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Gauthier & Connors LLP
- Main IPC: G02B6/10
- IPC: G02B6/10
Abstract:
A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.
Public/Granted literature
- US20070025670A1 Method of fabricating Ge or SiGe/Si waveguide or photonic crystal structures by selective growth Public/Granted day:2007-02-01
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