Invention Grant
US07801709B2 Simulation method using a simulation system that provides information on a transfer pattern of a predetermined mask pattern transferred to a wafer by optical photolithography and method of modifying mask pattern 失效
使用模拟系统的模拟方法,该模拟系统提供通过光学光刻法传送到晶片的预定掩模图案的转印图案的信息以及修改掩模图案的方法

  • Patent Title: Simulation method using a simulation system that provides information on a transfer pattern of a predetermined mask pattern transferred to a wafer by optical photolithography and method of modifying mask pattern
  • Patent Title (中): 使用模拟系统的模拟方法,该模拟系统提供通过光学光刻法传送到晶片的预定掩模图案的转印图案的信息以及修改掩模图案的方法
  • Application No.: US11755303
    Application Date: 2007-05-30
  • Publication No.: US07801709B2
    Publication Date: 2010-09-21
  • Inventor: Yukiya Kawakami
  • Applicant: Yukiya Kawakami
  • Applicant Address: JP Kanagawa
  • Assignee: NEC Electronics Corporation
  • Current Assignee: NEC Electronics Corporation
  • Current Assignee Address: JP Kanagawa
  • Agency: Young & Thompson
  • Priority: JP2006-151244 20060531
  • Main IPC: G06F17/50
  • IPC: G06F17/50
Simulation method using a simulation system that provides information on a transfer pattern of a predetermined mask pattern transferred to a wafer by optical photolithography and method of modifying mask pattern
Abstract:
A simulation system includes an input acceptance unit that accepts a measured dimension of a transfer pattern; a calculation unit including a light intensity calculation unit that calculates a light intensity at each position, and a modified light intensity calculation unit that adds a modified value including the product of the light intensity and a tentative optical reaction coefficient to the light intensity, thereby giving a modified light intensity; and a decision unit that decides the threshold value and optical reaction coefficient by regression calculation such that a difference between the measured dimension and the calculated dimension becomes minimal under the modified light intensity, with a constant being the threshold value of the light intensity at a pair of edges defining the calculated dimension of the transfer pattern in the simulation.
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