Invention Grant
US07802349B2 Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
有权
薄膜体声波谐振器(FBAR)滤波器的制造工艺
- Patent Title: Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
- Patent Title (中): 薄膜体声波谐振器(FBAR)滤波器的制造工艺
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Application No.: US11748970Application Date: 2007-05-15
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Publication No.: US07802349B2Publication Date: 2010-09-28
- Inventor: Richard C. Ruby , John D. Larson , Paul D. Bradley
- Applicant: Richard C. Ruby , John D. Larson , Paul D. Bradley
- Applicant Address: SG Singapore
- Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L41/22
- IPC: H01L41/22 ; H01L41/00

Abstract:
Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.
Public/Granted literature
- US20090146531A1 Manufacturing Process For Thin Film Bulk Acoustic Resonator (FBAR) Filters Public/Granted day:2009-06-11
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