Invention Grant
US07802538B2 Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
有权
通过使用粘性前体的化学气相沉积法沉积功能梯度电介质膜的方法
- Patent Title: Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
- Patent Title (中): 通过使用粘性前体的化学气相沉积法沉积功能梯度电介质膜的方法
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Application No.: US11608333Application Date: 2006-12-08
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Publication No.: US07802538B2Publication Date: 2010-09-28
- Inventor: Deenesh Padhi , Sohyun Park , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
- Applicant: Deenesh Padhi , Sohyun Park , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/30 ; C23C16/455 ; C23C16/52
Abstract:
A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.
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