Invention Grant
- Patent Title: Imprinting of partial fields at the edge of the wafer
- Patent Title (中): 在晶片边缘印刷局部场
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Application No.: US11694500Application Date: 2007-03-30
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Publication No.: US07802978B2Publication Date: 2010-09-28
- Inventor: Sidlgata V. Sreenivasan , Byung-Jin Choi
- Applicant: Sidlgata V. Sreenivasan , Byung-Jin Choi
- Applicant Address: US TX Austin
- Assignee: Molecular Imprints, Inc.
- Current Assignee: Molecular Imprints, Inc.
- Current Assignee Address: US TX Austin
- Agent Laura C. Robinson
- Main IPC: B28B17/00
- IPC: B28B17/00 ; B29C59/00
Abstract:
The present invention is directed towards several aspects of imprint lithography that have to be improved to address imprinting of partial fields and dies at the edge of the wafer.
Public/Granted literature
- US20070228609A1 Imprinting of Partial Fields at the Edge of the Wafer Public/Granted day:2007-10-04
Information query
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