Invention Grant
US07803261B2 Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns
有权
在带电荷图案的电荷存储装置上沉积颗粒的方法和电荷图案的形成方法
- Patent Title: Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns
- Patent Title (中): 在带电荷图案的电荷存储装置上沉积颗粒的方法和电荷图案的形成方法
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Application No.: US12000944Application Date: 2007-12-19
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Publication No.: US07803261B2Publication Date: 2010-09-28
- Inventor: Shangjr Gwo , Hsien-Te Tseng
- Applicant: Shangjr Gwo , Hsien-Te Tseng
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Rosenberg, Klein & Lee
- Main IPC: B01J8/00
- IPC: B01J8/00

Abstract:
The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas.
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