Invention Grant
- Patent Title: Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
- Patent Title (中): 光刻胶组合物和多层光刻胶系统的多次曝光工艺
-
Application No.: US11942062Application Date: 2007-11-19
-
Publication No.: US07803521B2Publication Date: 2010-09-28
- Inventor: Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
- Applicant: Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Joseph Petrokaitis
- Main IPC: G03F7/30
- IPC: G03F7/30

Abstract:
A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
Public/Granted literature
- US20090130590A1 PHOTORESIST COMPOSITIONS AND PROCESS FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER PHOTORESIST SYSTEMS Public/Granted day:2009-05-21
Information query
IPC分类: