A technology for analyzing and evaluating of a change of impurity content distribution at the heat treatment of electrodeposited copper film. There is provided a method of evaluating a semiconductor device, comprising providing an electrodeposited copper film formed while causing the deposition current to transit between the first state of current density and the second state of current density so as to attain a desired impurity content distribution and carrying out analysis and evaluation of any impurity diffusion from a change of impurity content distribution in the electrodeposited copper film between before and after heat treatment.